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| (R) EMIF11-10002C4 IPADTM 9 LINES EMI FILTER AND ESD PROTECTION MAIN PRODUCT CHARACTERISTICS: Where EMI filtering in ESD sensitive equipment is required : Mobile phones and communication systems s Computers, printers and MCU Boards s DESCRIPTION The EMIF11-10002C4 is a highly integrated devices designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interferences. This device includes 9 EMI filters & ESD protection circuitry which prevents the device from destruction when subjected to ESD surges up 15kV. In addition, the EMIF11 integrates 2 other ESD protection for data and 1 ESD protection for VCC. QFN 4x4mm BENEFITS s s s s s s EMI symmetrical (I/O) low-pass filter High efficiency in EMI filtering High efficiency in ESD suppression (IEC61000-4-2 level 4) High reliability offered by monolithic integration High reducing of parasitic elements through integration & wafer level packaging QFN 4x4mm package for an easy layout PIN CONFIGURATION (ball side) I1 I2 GND 01 02 03 04 GND I3 I4 I5 I6 GND I7 I8 I9 I10 I11 I12 GND 07 08 09 010 011 012 COMPLIES WITH THE FOLLOWING STANDARDS: IEC61000-4-2 Level 4 on input pins 15kV 8 kV (air discharge) (contact discharge) 05 06 GND MIL STD 883E - Method 3015-7 Class 3 BASIC CELL CONFIGURATION Input 4 to 12 Output 4 to 12 I1/O1 I2/O2 (Vcc) I3/O3 GND Ri/o = 100 Cline = 45pF 9 filters GND GND TM : IPAD is a trademark of STMicroelectronics. October 2003 - Ed: 1A 1/6 EMIF11-10002C4 ABSOLUTE RATINGS (limiting values) Symbol Tj TL Top Tstg Parameter and test conditions Maximum junction temperature Maximum lead temperature for soldering during 10s Operating temperature range Storage temperature range Value 150 260 -40 to + 85 -40 to +85 Unit C C C C ELECTRICAL CHARACTERISTICS (Tamb = 25 C) Symbol VBR IRM VRM RI/O Cline Parameter Breakdown voltage Leakage current @ VRM Stand-off voltage Series resistance between Input & Output Input capacitance per line VCL VBR VRM IRM IR VF V I IF IPP Symbol VBR IRM RI/O Cline IR = 1 mA VRM = 3V per line Cells 4 to 12 Test conditions Min. 6 Typ. 7 Max. 8 1 Unit V A pF 90 100 45 110 VR = 0V (Cells 4 to 12) Fig. 1: S21(dB) attenuation measurement and Aplac simulation. 0 dB -10 Fig. 2: Analog crosstalk measurements. -30 dB Measurement -40 -20 -50 Simulation -30 -60 -40 -70 -50 1 10 f/Hz 100 1,000 MHz -80 1 10 f/Hz 100 1,000MHz 2/6 EMIF11-10002C4 Fig. 3: Digital crosstalk measurement. Fig. 4: ESD response to IEC61000-4-2 (+15kV air discharge) on one input V(in) and on one output V(out). Vin Vi n V(In) Vout 1.8mV e Xtalk = -55dB -> V(Out) 10V/div 100ns/div Fig. 5: ESD response to IEC61000-4-2 (-15kV air discharge) on one input V(in) and on one output V(out). Fig. 6: Line capacitance of filter cells versus applied voltage. C(pF) 55 V(In) 50 45 40 35 30 25 20 F = 1MHz Vosc = 30mVRMS Tj = 25C V(Out) 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VR(V) 10V/div 100ns/div 3/6 EMIF11-10002C4 Aplac model. Ix_die D16 DEMIF22 R16_04 100 D04 DEMIF22 Ox_die For each filter cell(filter4 to 12) substrate Vcc I3_die R3 10MEG 0 D1301 DEMIF30 D03 DEMIF22 substrate O3_die I1_die D02 DEMIF22 substrate O1_die substrate Substrate Substrate Substrate Substrate Substrate R95 Rcorner R96 Rcorner L127 Lcorner R97 Rpad R98 Rcorner R99 Rcorner L130 Lcorner L126 Lcorner L128 Lpad L129 Lcorner 0 Demif30 Model RS=0.7 CJO=30p M=.3333 VJ=.6 ISR=100p BV=7 IBV=1m TT=100n Demif22 Model RS=0.7 CJO=22p M=.3333 VJ=.6 ISR=100p BV=14 IBV=1m TT=100n CAP = 0.2pF RES = 10meg Lcorner = 0.4nH Rcorner = 0.15 Lpad = 0.15nH Rpad = 0.1 4/6 EMIF11-10002C4 Aplac model (continued). 0 0 0 0 res I1 cap 0.4nH I1_die I7 res cap 0.4nH I7_die O7_die 0.4nH cap res O7 O1_die 0.4nH cap res O1 res I3 cap 0.4nH I3_die I8 res cap 0.4nH I8_die O8_die 0.4nH cap res O8 O3_die 0.4nH cap res O3 res I4 cap 0.4nH I4_die I9 res cap 0.4nH I9_die O9_die 0.4nH cap res O9 O4_die 0.4nH cap res O4 res I5 cap 0.4nH I5_die res I10 cap 0.4nH I10_die O10_die 0.4nH cap res O10 O5_die 0.4nH cap res O5 res I6 cap 0.4nH I6_die res I11 cap 0.4nH I11_die O11_die 0.4nH cap res O11 O6_die 0.4nH cap res O6 res cap res I12 cap 0.4nH I12_die O12_die 0.4nH cap res O12 cap res 0 res cap cap res 0 0 0 PACKING Dot identifying Pin A1 location 4 +/- 0.1 O 1.5 +/- 0.1 1.75 +/- 0.1 5.5 +/- 0.05 1.1 +/- 0.1 All dimensions in mm 12 +/- 0.3 ST xxx yww ST xxx yww ST xxx yww 4 +/- 0.1 User direction of unreeling 5/6 EMIF11-10002C4 PACKAGE MECHANICAL DATA QFN 4x4mm DIMENSIONS REF. A A1 A2 D D1 E1 E Millimeters Min. Typ. Max. 1.00 0.05 0.65 4.00 3.75 4.00 3.75 12 0.24 0.13 0.42 0.17 0.50 24.00 6.00 6.00 0.30 0.18 0.20 1.95 1.95 2.10 2.10 0.40 0.50 0.30 0.45 2.25 2.25 0.077 0.077 0.012 0.007 0.60 0.23 0.009 0.005 0.80 Min. 0.031 0 0.80 0 Inches Typ. Max. 0.040 0.002 0.026 0.157 0.148 0.157 0.148 12 0.017 0.007 0.020 0.945 0.236 0.236 0.016 0.008 0.083 0.083 0.020 0.012 0.018 0.089 0.089 0.024 0.009 0.031 A A1 A2 Nd D D1 O 0.50 1 2 3 Ne E E1 O O b SEATING PLANE Q P D2 P R e R 1 2 3 N E2 Nd Ne L L e b Q D2 E2 OTHER INFORMATION Ordering code EMIF11-10002C4 Marking E11U Package QFN 4x4mm Weight 235 mg Base qty 4000 Delivery mode Tape & reel (7") Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain Sweden - Switzerland - United Kingdom - United States www.st.com 6/6 |
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